型号 | 材料 | 工作波长(nm) | 光敏面(mm2(mm)) | 封装 | 上升/下降沿时间RL=50Ω |
FGA04 | InGaAs | 800-1800 | 0.008 (Ø0.1) | TO-46 w/ FC/PC Connector | 100ps (100ps) @ 5V |
FGA10 | InGaAs | 700-1800 | 0.79 (Ø1) | TO-5/ PIN | 7ns (7ns) @ 5V |
FGA20 | InGaAs | 1200-2600 | 0.79 (Ø1) | TO-18/ PIN | 23ns (23ns) @ 1V |
FGA21 | InGaAs | 800-1800 | 3.14 (Ø2) | TO-5/ PIN | 66ns (66ns) @ 0V |
FDS02 | Si | 400-1100 | 0.25mm | TO-46 FC/PC Connector | 47ps (246ps) @ -5V |
FDS010 | Si | 200-1100 | 0.81 (Ø1) | TO-5/ PIN | <1ns (<1ns) @ 20V |
FDS100 | Si | 350-1100 | 13 (3.6 x 3.6) | TO-5/ PIN | 10ns (10ns) @ 20V |
FDS1010 | Si | 400-1100 | 100 (9.7 x 9.7) | Ceramic Wafer | 45ns (45ns) @ 5V |
FDG03 | Ge | 800-1800 | 7.1 (Ø3) | TO-5/ PIN | 500ns (500ns) @ 3V |
FDG05 | Ge | 800-1800 | 25 (5 x 5) | Ceramic Substrate | 220ns @ 3V |
FDG1010 | Ge | 800-1800 | 100 (10 x 10) | Ceramic Substrate | 3.5μs @ 1V |
FGAP71 | GaP | 150-550 | 4.8 (2.5 x 2.5) | - | 1ns (140ns) @ 5V |
PSD1 (四象限) | InGaAs | 900-1700 | 3.14 (Ø2) | TO-5/ Metal | - |
DSD2 (双波段) | Si 和InGaAs | Si: 400-1100 InGaAs: 1000-1800 | Ø2.54mm Ø1.5mm | TO-54/ PIN | 4μs typical (both layers) |
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