O2 can make sure the film is fully oxidized.
Too much O2 cause the tooling factor changes, film packing density decreases, refractive index decreases. The adhesion might also get worse.
Not enough O2 can't fully oxidize the film, so you can't get a reliable film if the film is exposed in air for a long time.作者: tianguosky1 时间: 2009-4-14 08:08
14楼的,能不能给出结论的合理解释,谢谢!!!作者: AR_coating 时间: 2009-4-15 01:07 16#tianguosky1
Too much O2 increases the chamber pressure, if your crystal is not located at the same height of the substrate, the tooling factor changes.
Too much O2 increases the voids inside the SiO2 film, let's say, you want N_SiO2=1.45, now you can get 90% SiO2, the left 10% is void, which is Air, so the final film's refractive index decreases (0.9*1.45+0.1*1=1.405).
Less O2 causes the film not fully oxidized, after a long time expose in the air, the O2 in the air may gradually oxidize the film and change the refractive index.作者: riy2000 时间: 2009-4-19 00:21
充氧是肯定会对材料折射率有所改变的,但是对膜牢影响不大,除非充氧太多,真空度很低了。作者: likesongs 时间: 2009-8-23 11:58
14#,16#说的非常好!太感谢了!作者: YJD 时间: 2009-9-2 21:35
充氧后真空室中压强减少作者: ipshjh2005 时间: 2011-7-13 13:09 作者: killjackson 时间: 2011-7-14 12:52
这个还真不能一概而论!
要具体到不同的镀膜条件下去。。。作者: fasces9 时间: 2011-7-25 11:52
sio2充氧会使产品发蒙,光洁度看起来好一点作者: yufe16fisher 时间: 2011-7-25 12:03
氧气多了,附着力很差作者: wcb674399566 时间: 2011-9-11 10:36 作者: 冷月凝霜 时间: 2011-9-12 13:00
实验研究作者: ipshjh2005 时间: 2011-10-10 07:43 作者: Haa 时间: 2011-10-10 10:51
sio2充o2要控制好流量,不然会引起脱膜作者: ipshjh2005 时间: 2011-10-14 07:21 作者: Martin_Ko 时间: 2011-10-31 20:58
学习了作者: wdydede 时间: 2012-5-13 17:52
学习了