Complete ,o.c-Si:Hp-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic ,x-Si:H has never attracted much attention as a photovoltaic active
material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm’ due to an enhanced absorption in the near-infrared could be obtained. First light-soaking experiments indicate no degradation for the entirely pc-Si:H cells. Voltage-dependent spectral response measurements suggest that the carrier transport in complete pc-Si:H p-i-n cells may possibly be cosupported by diffusion (in addition to drift).