硬脆材料的化学机械抛光机理研究

硬脆材料的化学机械抛光机理研究
The Chemical Mechanical Polishing Technique Research of the Hard and Brittle Materials
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作　　者：武昌壕 郭冰 姚光 赵清亮
WU Chang-hao, GUO Bing, YAO Guang, ZHAO Qing-liang （College of Mechanical and Electrical Engineering, Harbin Institute of Technology, Heilongjiang Harbin 150001, China）
机构地区：哈尔滨工业大学机电工程学院,黑龙江哈尔滨,150001
出　　处：《机械设计与制造》 2014年第2期 37-39页,共3页
Machinery Design ＆ Manufacture
基　　金：国家自然科学基金（51075093）
摘　　要：化学机械抛光（Chemical Mechanical Polishing,简称CMP）技术是目前唯一可提供全局平面化的超精密表面加工技术,加工后无表面和亚表面损伤.该技术广泛应用于光学元件、微机电系统、集成电路芯片等表面的处理,可达到纳米级的表面粗糙度和微米级的面形精度.目前的研究主要集中在化学机械抛光工艺上,抛光机理尚未形成统一的学说.针对硬脆材料（Si、SiC）的CMP技术进行综述,介绍了CMP技术的发展现状,并对加工过程中存在的材料去除机理做了可能性解释,最后对CMP技术的发展和研究重点做了预测和建议.
Chemical mechanical polishing, which is short, for CMP, is the only. global plat,rizuian technalogy .fir ultra precision surface processing, and there is no sure and sub-surface danage after processed. Bectuse of its ad,antages in achieving nanoscale surface roughtwss and micron surface accuracy, CMP is widely used itz the surface tretament of optical elements, micro-electromechattical systems, integraled circuit chips, etc. The research has mainly focused on the chemical mechanical polishing process, and the polihing mechtmism has not yet formed a unified theory until nu,. The progress of CMP for bard cmd brittle mttterial, like Si trod SiC is reviewed here; meanwhile, the probable removal mechanism /CMP are presented. At last, the fiture trends atd key problems of CMP are discussed.
关键词：化学机械抛光 去除机理 影响因素 表面质量
Chemical Mechanical Polishing ; Removal Mechanism ; Factors ; Surface Quality ;