硬盘微晶玻璃基板化学机械抛光研究

硬盘微晶玻璃基板化学机械抛光研究
Investigation on Chemical Mechanical Polish of Glass Ceramics Substrate of Hard Disk
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作　　者：王金普 白林山 储向峰
WANG Jin-pu, BAI Lin-shan, CHU Xiang-feng （School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, China）
机构地区：安徽工业大学化学与化工学院,马鞍山243002
出　　处：《人工晶体学报》 EI CSCD 2015年第44卷第1期 216-220页,共5页
Journal of Synthetic Crystals
基　　金：国家自然科学基金（50975002）; 教育部高校留学回国人员科研项目; 安徽省教育厅自然科学基金（KJ2011A057）
摘　　要：利用自制的抛光液对硬盘微晶玻璃基板进行化学机械抛光。研究了抛光压力、SiO2浓度、pH和氧化剂过硫酸铵浓度等因素对材料去除速率MRR和表面粗糙度Ra的影响,系统分析了微晶玻璃抛光工艺过程中的影响因素,优化抛光工艺条件,利用原子力显微镜检测抛光后微晶玻璃的表面粗糙度。结果表明：当抛光盘转速为100 r/min、抛光液流量为25 m L/min、抛光压力为9.4 k Pa、SiO2浓度为8wt%、pH=8、过硫酸铵浓度为2wt%时,能够得到较高的去除速率（MRR=86.2 nm/min）和较低表面粗糙度（Ra=0.1 nm）。
In this work,chemical mechanical polish experiments were done on glass ceramics substrates using self-made polishing liquid. The effects of polishing pressure,concentration of SiO2,pH of slurry and concentration of oxidant（（NH4）2S2O8） on the material removal rate and the surface roughness of the glass ceramics substrate were investigated. The polishing process conditions were optimized by analyzing the influence factors of the glass ceramics CMP technique systematically,then the surface roughness of glass ceramics substrate after polishing was measured by an Atomic Force Microscopy（AFM）. The results show that under the following CMP conditions： 9. 4 k Pa,8wt% SiO2,pH = 8 and2wt%（NH4）2S2O8,the MRR and the Ra could attain 86. 2 nm/min and 0. 1 nm,respectively.
关键词：微晶玻璃 化学机械抛光 表面粗糙度 材料去除率
glass ceramic ; chemical mechanical polishing ; surface roughness ; MRR ;