不同磨料对微晶玻璃化学机械抛光的影响

不同磨料对微晶玻璃化学机械抛光的影响
Effect of Different Abrasives on Chemical Mechanical Polishing of Glass-Ceramics
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作　　者：王金普 白林山 储向峰
Wang Jinpu, Bai Linshan, Chu Xiangfeng （ School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, China）
机构地区：安徽工业大学化学与化工学院,马鞍山243002
出　　处：《纳米技术与精密工程》 EI CSCD 2015年第13卷第1期 74-79页,共6页
Nanotechnology and Precision Engineering
基　　金：教育部高校留学回国人员科研资助项目;安徽工业大学创新团队资助项目（TD201204）;国家自然科学基金资助项目（50975002）.
摘　　要：为了提高微晶玻璃化学机械抛光（CMP）的材料去除速率（MRR），降低其表面粗糙度，利用自制的抛光液对微晶玻璃进行化学机械抛光，研究了4种含不同磨料（ SiO2、Al2 O3、Fe2 O3、CeO2）的抛光液对微晶玻璃化学机械抛光MRR和表面粗糙度的影响．利用纳米粒度仪检测抛光液中磨料的粒径分布和Zeta电位，利用原子力显微镜观察微晶玻璃抛光前后的表面形貌．实验结果表明，在相同条件下，采用CeO2作为磨料进行化学机械抛光时可以获得最好的表面质量，抛光后材料的表面粗糙度Ra＝0．4 nm， MRR＝100．4 nm／min．进一步研究了抛光液中不同质量分数的CeO2磨料对微晶玻璃化学机械抛光的影响，结果表明，当抛光液中CeO2质量分数为7％时，最高MRR达到185 nm／min，表面粗糙度Ra＝1．9 nm；而当抛光液中CeO2质量分数为5％时， MRR＝100．4 nm／min，表面粗糙度最低Ra＝0．4 nm．CeO2磨料抛光后的微晶玻璃能获得较低表面粗糙度和较高MRR．
In order to increase the material removal rate （ MRR） and decrease the surface roughness of glass-ceramics in chemical mechanical polishing （CMP）, experiments were conducted on glass-ceramic substrates by using home-made slurries , and the effect of different abrasives （ SiO2 , Al2 O3 , Fe2 O3 , CeO2 ） on the MRR and surface roughness of glass-ceramics in CMP was investigated .The size distribu-tion and Zeta potential of the different abrasive particles were characterized by Mastersizer .The surface roughness of the glass-ceramic substrates before and after being polished by different abrasives was meas-ured by atomic force microscope （ AFM ） .Results show that under the same conditions , the surface roughness Ra of the glass-ceramic substrate is 0.4 nm and the MRR is 100.4 nm/min when CeO2 was abrasive in the slurry .Then the effect of CeO 2 mass fraction on CMP of glass-ceramics was studied .It was found that when the mass fraction of CeO2 is 7%, the MRR of glass-ceramic substrate is 185 nm/min and the surface roughness Ra is 1.9 nm;while when the mass fraction of CeO 2 is 5%, the MRR of glass-ceramic substrate is 100.4 nm/min and the surface roughness Ra is 0.4 nm.Lower surface roughness and higher MRR can be obtained after being polished by CeO 2 slurry .
关键词：微晶玻璃 化学机械抛光 材料去除速率 表面粗糙度 磨料
glass-ceramics ;chemical mechanical polishing ;material removal rate ;surface roughness ;abrasive ;