硅抛光片表面疏水改性工艺研究

硅抛光片表面疏水改性工艺研究
Modification of Silicon Surface Hydrophobic Wafers
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作　　者：黄彬 冯琬评
HUANG Bin, FENG Wanping （The 46th Research Institute, CETC , Tianjin 300220, China）
机构地区：中国电子科技集团公司第四十六研究所,天津300220
出　　处：《电子工业专用设备》 2014年第43卷第7期 13-17页,21页,共6页
Equipment for Electronic Products Marufacturing
摘　　要：采用稀释HF溶液对亲水性的硅抛光片表面进行了疏水改性,并对HF腐蚀硅片表面氧化层、钝化表面的机理进行了分析.研究了HF溶液浓度和反应时间对硅抛光片表面颗粒度和接触角的影响,通过对比分析,得到了HF溶液疏水改性的最佳浓度和最佳反应时间,HF体积比为3％,反应时间为120 s时,HF能够与样品表面充分反应,并且二次吸附颗粒数量最少.采用兆声溢流方式可以大大减少样品表面吸附颗粒数量,而不影响疏水性能.
In this paper, the surface of silicon wafers dilute HF solution on the hydrophlllClty ot mehydrophobic modification, and the HF oxidation silicon surface layer, surface passivation mechanismwas analyzed. The effects of HF concentration and reaction time on the particle surface of siliconwafers and contact angle, through the comparative analysis, the optimal concentration of HF aqueoussolution of hydrophobically modified and the optimal reaction time, HF volume ratio is 3%, reactiontime was 120 seconds, HF can fully react with the surface of the sample, and two times of adsorptionthe least number of particles. The megasonic overflow can greatly reduce the number of adsorption ofsample surface particles, without affecting the hydrophobic properties.
关键词：疏水改性 接触角 颗粒度 兆声溢流
Hydrophobically modified ; Contact angle ; Particle size ; Megasonic overflow ;