络合剂对蓝宝石晶片化学机械抛光的影响

风轻扬 · 发表于 2015-7-12 19:02:04

络合剂对蓝宝石晶片化学机械抛光的影响
Effect of Chelating Agent on Chemical Mechanical Polishing Quality of Sapphire
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作　　者：熊伟白林山储向峰董永平陈均毕磊叶明富
Xiong Wei, Bai Linshan, Chu Xiangfeng, Dong Yongping, Chen Jun, Bi Lei, Ye Mingfu （School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002）
机构地区：安徽工业大学化学化工学院,马鞍山243002
出　　处：《机械科学与技术》 CSCD 2014年第33卷第7期 1027-1030页,共4页
Mechanical Science and Technology
基　　金：国家自然科学基金项目（50975002）; 安徽工业大学创新团队项目（TD201204）; 教育部高校留学回国人员科研项目资助
摘　　要：利用自制的抛光液对蓝宝石晶片进行化学机械抛光,研究化学机械抛光过程中抛光压力、抛光液pH值、SiO2浓度、络合剂种类及其浓度等参数对抛光速率的影响,采用MicroNano D-5A扫描探针显微镜观察抛光前后蓝宝石晶片的表面形貌。结果表明：在抛光条件为压力7psi、转速为50 r/min、抛光液流量为60 mL/min,抛光液组成为pH值12、SiO2浓度5%、络合剂Ⅰ及其浓度为1.25%时,得到最大抛光速率为35.30 nm/min,蓝宝石晶片表面质量较好,表面粗糙度Ra达到0.1 nm。
CMP （chemical mechanical polishing） experiments of sapphire substrates were carried out by using home-made slurry in order to study the effect of chelating agent on chemical mechanical polishing quality of sapphire. The comprehensive effects of the polishing down force, pH value, S{O2 concentration, the species and the concentration of chelating agent as well as particle concentration on the material removal rate （MRR） were investigated in detail. The surface of the polished sapphire was characterized by DSA-type multi-mode scanning probe microscope. The experimental results reveal that MRR can reach 35.3 nm/min and the surface roughness average （Ra） can reach 0.1 nm under the following CMP conditions： the down pressure force is 7 psi, polishing rotation speed is 50 r/min, polishing liquid is 60 mL/min; and ingredients of slurry： SiO2 concentration is 5% （mass fraction）, pH = 12.0, and chelating agent I concentration is 1.25% .
关键词：蓝宝石化学机械抛光抛光速率络合剂
chelating agent ; chemical mechanical polishing ; removal rate ; sapphire ; substrates ; surface roughness ;

[资料] 络合剂对蓝宝石晶片化学机械抛光的影响

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