硒化锌的化学机械抛光研究

硒化锌的化学机械抛光研究
Study on the Chemical Mechanical Polishing of ZnSe
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作　　者：吴传超[1] 安永泉[1] 王志斌[1,2] 杨常青[1] 张瑞[1]
WU Chuan-chao , AN Yong-quan , WANG Zhi-bin, YANG Chang-qing , ZHANG Rui （ 1. Engineering Technology Research Center of Shanxi Province for Opto-Electronic Information and Instrument, Taiyuan 030051, China; 2. Key Lab of Instrument Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China）
机构地区：[1]山西省光电信息与仪器工程技术研究中心,太原030051 [2]中北大学仪器科学与动态测试教育部重点实验室,太原030051
出　　处：《人工晶体学报》 EI CSCD 2015年第44卷第1期 61-65页,共5页
Journal of Synthetic Crystals
基　　金：国际科技合作项目（2013DFR10150）
摘　　要：采用化学机械抛光（CMP）的方法,自制抛光液作为研磨介质,对（50×50×1.5）mm3硒化锌（ZnSe）晶片抛光。通过分析抛光液的pH值、抛光盘转速、抛光液的磨料浓度、压力、抛光时间和抛光液流量等参数对CMP的影响,组合出最佳工艺参数,并通过原子力显微镜和平晶测试方法对最佳工艺参数获得的ZnSe晶片进行测试,实验结果显示,ZnSe晶片抛光后的表面粗糙度Ra为0.578 nm,平面面形误差小于1.8μm。
The ZnSe wafer（50 × 50 × 1. 5） mm3 was polished by chemical mechanical polishing（CMP）method using self-made abrasive as grinding medium. After the effects of the parameters such as the pH value of the polishing liquid on the CMP had been analyzed,rotating rate,the concentration of abrasive,pressure,polishing time and a flow rate of polishing liquid,the best process parameters could be obtained. The ZnSe wafer after polishing with the best process parameters was detected by an atomic force microscope and optical flat. The experimental results show that the surface roughness is 0. 578 nm and the optimal flatness is less than 1. 8 μm.
关键词：ZnSe晶片 化学机械抛光 表面粗糙度
ZnSe wafer ; chemical mechanical polishing ; surface roughness ;