类球形氧化铈的制备及抛光性能

风轻扬 · 发表于 2015-7-12 19:03:12

类球形氧化铈的制备及抛光性能
Preparation of Roundish CeO2 and Its Polishing Performances
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作　　者：周新木阮桑桑彭欢李静李永绣
Zhou Xinmu, Ruan Sangsang, Peng Huan, Li Jing, Li Yongxiu （Department of Chemistry, Nanchang University, Nanchang 330031, China）
机构地区：南昌大学化学系,江西南昌330031
出　　处：《稀有金属》 CSCD 2014年第38卷第6期 1005-1010页,共6页
Chinese Journal of Rare Metals
基　　金：国家科技部863项目（2010AA03A407）资助
摘　　要：采用溶剂热法合成了粒径为200 nm左右的类球形Ce O2前驱体,在一定温度下煅烧得到抛光粉,采用X射线衍射仪（XRD）、扫描电镜（SEM）、透射电镜（TEM）、电子衍射、激光粒度分析仪等对其进行了表征和观察;同时考察了溶剂热温度、分散剂种类和用量等因素对合成类球形Ce O2前驱体的影响,以及不同煅烧温度和煅烧时间对单晶硅片抛光性能的影响。结果表明：以氯化铈为铈源,以0.75 mol·L^-1NH3·H2O为沉淀剂,乙二醇为溶剂,聚乙烯吡咯烷酮（PVP）为分散剂,搅拌30 min后得到浑浊液转移至50 ml内衬聚四氟乙烯（PTFE）反应罐中,在烘箱中于180℃反应24 h,沉淀分别用去离子水,无水乙醇各洗3次,放于60℃烘箱中烘干,得到氧化铈前驱体,经500℃煅烧2 h为D50=203 nm的类球形Ce O2粉体,粉体分散性好,配成质量分数为0.2%的抛光浆料对n（111）型单晶硅片抛光,得到较高抛光速率和超平整的抛光表面。
The roundish Ce O2 precursors with diameters of 200 nm were synthesized by solvothermal method. And the polishing powder was obtained by calcining the precursor at different temperatures and characterized by X-ray diffraction（ XRD）,scanning electron microscopy（ SEM）,transmission electron microscopy（ TEM）,electron diffraction,and laser particle size analyzer. The effect of solvothermal temperatures,the kind and amount of dispersant on the Ce O2 precursors and the effect of the different calcining temperatures and time on the performance of monocrystalline silicon polishing were studied. The results showed that the roundish precursors could be obtained using cerium chloride as the source,0. 75 mol·L^- 1NH3·H2O as the precipitator,ethylene glycol as the solvent and polyvinyl pyrrolidone（ PVP） as the dispersant,a turbid liquid was obtained after stirring for 30 min,then transferred into a 50 ml autoclave lined with polytetrafluoro ethylene（ PTFE）,put into the oven under 180 ℃ to react for 24 h. The product was precipitated,washed with deionized water and anhydrous ethanol each 3 times,then dried at about 60 ℃ to get the Ce O2 precursors. The precursors transformed into the roundish Ce O2 powders with D50 of 203 nm by calcining at 500 ℃,it had excellent dispersibility,and with the mass fraction of 0. 2% polishing slurry,the higher polishing rate and the ultra-smooth surface of n（ 111）-type silicon wafer could be acquired after polished.
关键词：氧化铈类球形合成抛光
ceria ; roundish ; synthesis ; polishing ;

[技术] 类球形氧化铈的制备及抛光性能

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