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航空太阳能电池用超薄锗单晶的精密抛光
Fine Polishing of Ultra-Thin Single-Crystal Ge for Aerospace Application of Solar Cell
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作 者:杨昊鸥 刘玉岭 牛新环 孙鸣 李强
YANG Haokun, LIU Yuling, NIU Xinhuan, SUN Ming, LI Qiang (Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, P. R. China)
机构地区:河北工业大学微电子研究所,天津300130
出 处:《微电子学》 CSCD 2014年第4期 537-541页,共5页
Microelectronics
基 金:国家中长期科技发展规划02科技重大专项(2009ZX02308)
摘 要:主要对影响锗单晶抛光后表面微粗糙度的关键因素—抛光液组分的作用进行分析。采用变量控制的实验方法,从活性剂、有机胺碱、氧化剂、硅溶胶磨料和螯合剂五个因素出发进行实验。针对粗糙度影响因素进行分析与优化,同时对抛光速率进行了分析,研究得出,抛光液组分中氧化剂浓度对CMP过程中锗衬底片表面微粗糙度及去除速率的影响最为显著。优化抛光液组分配比,在抛光速率基本满足工业要求(1.5μm/min)下,经过CMP后锗衬底表面微粗糙度可有效降到1.81 nm(10μm×10μm)。在最佳配比下,采用小粒径、低分散度(99%〈82.2nml的硅溶胶磨料配制抛光液,其抛光效果明显优于采用大粒径、高分散度的硅溶胶磨料配制的抛光液。
The key factor of affecting the surface micro roughness of single-crystal Ge after polishing is just the polishing slurry composition, and it was analyzed in detail. By adopting variable controlled method, experiments were carded out with the slurry contained the surfactant, organic base, oxidant, the silica sol abrasive, and chelating agent as five factors. The surface roughness of the substrate is investigated and optimized. The CMP polishing rate is also analyzed. It indicates that the concentration of oxidant agent in the polishing slurry significantly affects the surface micro roughness and the removal rate of the germanium substrate. Meeting the demand of industrial removal rate (about 1.5μm/min), the surface micro roughness of Ge substrate could be decreased effectively below 1.81 nm (10 μm×10μm) after CMP with the optimization of slurry composition. With the optimal ratio of the slurry, the result shows it gains obviously higher CMP performance by using the proper polishing slurry contained silica sol of small size and low dispersion (99% 〈 82.2 nm), comoared to the slurry contained silica sol of large size and high dispersion.
关键词:锗衬底 航空电子 抛光液 氧化剂 粗糙度
Germanium substrate ; Aviation electronics ; Slurry ; Oxidant ; Surface roughness ; |
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